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| inchange semiconductor isc product specification isc silicon npnpower transistor 2SD726 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) high power dissipation complement to type 2sb690 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 4 a i cm collector current-peak 8 a p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npnpower transistor 2SD726 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; r be = 80 v v (br)ebo emitter-base breakdown voltage i e = 10 a; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.2a b 2.0 v v be (on) base-emitter on voltage i c = 1a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 0.1 ma h fe-1 dc current gain i c = 1a; v ce = 5v 60 200 h fe-2 dc current gain i c = 0.1a; v ce = 5v 35 c ob collector output capacitance i e = 0; v cb = 20v; f= 1mhz 40 pf f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 10 mhz ? h fe- 1 classifications b c 60-120 100-200 isc website www.iscsemi.cn 2 |
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